■ 제품필수정보
■ 제품사양
Memory Size = 512Mbit SDRAM Class = LPDDR Data Rate = 200MHz
데이터 버스 = 32bit Address Bus Width = 15bit Number of Bits per Word = 8bit Maximum Random Access Time = 5ns Number of Words = 64M
장착형태 = Surface Mount
패키지 = VFBGA
핀수 = 90
크기 = 13.1 x 8.1 x 0.65mm
높이 = 0.65mm Length = 13.1mm Width = 8.1mm VDD = 1.7??.95V VDDQ = 1.7??.95V Data width: x16 / x32 Clock rate: 200MHz (-5),166MHz (-6) Standard Self Refresh Mode Partial Array Self-Refresh(PASR) Auto Temperature Compensated Self Refresh (ATCSR) Power Down Mode Deep Power Down Mode (DPD Mode) Programmable output buffer driver strength Four internal banks for concurrent operation Data mask (DM) for write data Clock Stop capability during idle periods Auto Pre-charge option for each burst access Double data rate for data output Differential clock inputs (CK and CK) Bidirectional, data strobe (DQS) CAS Latency: 2 and 3 Burst Length: 2, 4, 8 and 16 Burst
타입: Sequential or Interleave 8K refresh cycles/64 mS Interface: LVCMOS compatible Support package: 60 balls VFBGA (x16) 90 balls VFBGA (x32) Operating Temperature Range Extended: -25°C ??TCASE ??85°C Industrial: -40°C ??TCASE ??85°CThis is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.Burst
타입: Sequential or Interleave Standard Self Refresh Mode PASR, ATCSR, Power Down Mode??DPD Programmable output buffer driver strength Four internal banks for concurrent operation Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
