상품이미지
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MPN : W949D2DBJX5I

Winbond W949D2DBJX5I, SDRAM 512Mbit Surface Mount, 200MHz, 1.7 V to 1.95 V, 90-Pin VFBGA
  • 브랜드

    Winbond

  • 무원상품코드

    M010969007407

  • 타입별
    PU
  • 주문가능수량

    60

  • 최소주문수량240
  • 판매단위240
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 240개 ~ 5,312원

  • 수량단가2 : 480개 ~ 5,206원

  • 수량단가3 : 960개 ~ 5,101원


총금액
(VAT 별도)
  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Winbond
제조사품명 W949D2DBJX5I
간략설명 Winbond W949D2DBJX5I, SDRAM 512Mbit Surface Mount, 200MHz, 1.7 V to 1.95 V, 90-Pin VFBGA

■ 제품사양

Memory Size = 512Mbit SDRAM Class = LPDDR Data Rate = 200MHz
데이터 버스 = 32bit Address Bus Width = 15bit Number of Bits per Word = 8bit Maximum Random Access Time = 5ns Number of Words = 64M
장착형태 = Surface Mount
패키지 = VFBGA
핀수 = 90
크기 = 13.1 x 8.1 x 0.65mm
높이 = 0.65mm Length = 13.1mm Width = 8.1mm VDD = 1.7??.95V VDDQ = 1.7??.95V Data width: x16 / x32 Clock rate: 200MHz (-5),166MHz (-6) Standard Self Refresh Mode Partial Array Self-Refresh(PASR) Auto Temperature Compensated Self Refresh (ATCSR) Power Down Mode Deep Power Down Mode (DPD Mode) Programmable output buffer driver strength Four internal banks for concurrent operation Data mask (DM) for write data Clock Stop capability during idle periods Auto Pre-charge option for each burst access Double data rate for data output Differential clock inputs (CK and CK) Bidirectional, data strobe (DQS) CAS Latency: 2 and 3 Burst Length: 2, 4, 8 and 16 Burst
타입: Sequential or Interleave 8K refresh cycles/64 mS Interface: LVCMOS compatible Support package: 60 balls VFBGA (x16) 90 balls VFBGA (x32) Operating Temperature Range Extended: -25°C ??TCASE ??85°C Industrial: -40°C ??TCASE ??85°CThis is a 512Mb Low Power DDR SDRAM organized as 2M words x 4 banks x 32bits.Burst
타입: Sequential or Interleave Standard Self Refresh Mode PASR, ATCSR, Power Down Mode??DPD Programmable output buffer driver strength Four internal banks for concurrent operation Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

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