■ 제품필수정보
| 제조사 | HXY MOSFET |
|---|---|
| 제조사품명 | IPW60R070P6-HXY |
| 간략설명 | TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
■ 제품사양
Operating Temperature = -40℃~+175℃ , Ciss-Input Capacitance = 1.02nF , Gate Threshold Voltage (Vgs(th)) = 3.6V , Gate Charge(Qg) = 46nC , Current - Continuous Drain(Id) = 29A , Reverse Transfer Capacitance (Crss) = 9pF , Drain to Source Voltage = 650V , Pd - Power Dissipation = 150W , Output Capacitance(Coss) = 80pF , RDS(on) = 79mΩ
