■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG10T65DJS1 |
| 간략설명 | 100W 20A 650V TO-252-2L Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.2V@250uA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 670pF , Td(off) = 71ns , Gate Charge(Qg) = 28nC@15V , Switching Energy(Eoff) = 170uJ , Pulsed Current- Forward(Ifm) = 30A , Reverse Transfer Capacitance (Cres) = 10pF , Turn-On Energy (Eon) = 180uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 57ns , Current - Collector(Ic) = 20A , Vce Saturation(VCE(sat)) = 2.2V@10A,15V , Pd - Power Dissipation = 100W , Td(on) = 12ns , Output Capacitance(Coes) = 37pF
