■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG15N120AI |
| 간략설명 | 175W 30A 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4V@250uA , Input Capacitance(Cies) = 550pF , Td(off) = 260ns , Switching Energy(Eoff) = 900uJ , Pulsed Current- Forward(Ifm) = 45A , Reverse Transfer Capacitance (Cres) = 110pF , Turn-On Energy (Eon) = 1.3mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Reverse Recovery Time(trr) = 255ns , Current - Collector(Ic) = 30A , Vce Saturation(VCE(sat)) = 2.7V@15A,15V , Pd - Power Dissipation = 175W , Td(on) = 33ns , IGBT
