■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG15T65FJS1 |
| 간략설명 | 39W 30A 650V TO-220F Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.4V@1mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.055nF , Td(off) = 104ns , Switching Energy(Eoff) = 270uJ , Pulsed Current- Forward(Ifm) = 60A , Reverse Transfer Capacitance (Cres) = 15pF , Turn-On Energy (Eon) = 300uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 55ns , Current - Collector(Ic) = 30A , Vce Saturation(VCE(sat)) = 1.6V@15A,15V , Pd - Power Dissipation = 39W , Td(on) = 17ns , Output Capacitance(Coes) = 57pF
