■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG25T65PS1 |
| 간략설명 | 139W 50A 650V TO-220 Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.1V@250uA , Operating Temperature = -55℃~+150℃ , Input Capacitance(Cies) = 978pF , Td(off) = 75ns , Switching Energy(Eoff) = 490uJ , Pulsed Current- Forward(Ifm) = 75A , Reverse Transfer Capacitance (Cres) = 8pF , Turn-On Energy (Eon) = 660uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 60ns , Current - Collector(Ic) = 50A , Vce Saturation(VCE(sat)) = 2.7V@25A,15V , Pd - Power Dissipation = 139W , Td(on) = 22ns , Output Capacitance(Coes) = 90pF
