■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IHW15N120E1 |
| 간략설명 | 156W 15A 1.2kV TO-247-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4V@0.5mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 810pF@25V , Td(off) = 150ns , Gate Charge(Qg) = 90nC@15V , Switching Energy(Eoff) = 30uJ , Current - Collector(Ic) = 15A , Vce Saturation(VCE(sat)) = 2V@15A,15V , Pd - Power Dissipation = 156W , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Voltage - Forward(Vf) = 1.9V@15A
