■ 제품필수정보
| 제조사 |
HXY MOSFET |
| 제조사품명 |
Si2374DS-T1-GE3-HXY |
| 간략설명 |
20V 3A 900mW 35mΩ@4.5V 1.2V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
■ 제품사양
Operating Temperature = -55℃~+150℃ ,
타입 = N-Channel , Input Capacitance(Ciss) = 260pF@10V , Gate Threshold Voltage (Vgs(th)) = 1.2V@250uA , Number = 1 N-Channel , Gate Charge(Qg) = 5nC , Current - Continuous Drain(Id) = 3A , Reverse Transfer Capacitance (Crss@Vds) = 27pF@10V , Drain to Source Voltage = 20V , Pd - Power Dissipation = 900mW , RDS(on) = 35mΩ@4.5V
-
