■ 제품필수정보
제조사 |
Vishay |
제조사품명 |
SI5935CDC-T1-GE3 |
간략설명 |
Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3 |
■ 제품사양
Channel
타입 = P Maximum Continuous Drain Current = 3.8 A Maximum Drain Source Voltage = 20 V
패키지 = 1206 ChipFET
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 156 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 3.1 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -8 V, +8 V Length = 3.1mm
높이 = 1.1mm Dual P-Channel MOSFET, Vishay Semiconductor