■ 제품필수정보

제조사	Vishay
제조사품명	SI4948BEY-T1-GE3
간략설명	Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 3.1 A Maximum Drain Source Voltage = 60 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 150 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.4 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +175 °C
높이 = 1.5mm Dual P-Channel MOSFET, Vishay Semiconductor