■ 제품필수정보

제조사	Infineon
제조사품명	IPD30N10S3L34ATMA1
간략설명	N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 100 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 42 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.4V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 57 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 6.22mm
높이 = 2.3mm Infineon OptiMOS??T Power MOSFETs. OptiMOS??products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant)