■ 제품필수정보

제조사	Infineon
제조사품명	IRG7PH35UD-EP
간략설명	Infineon IRG7PH35UD-EP IGBT, 50 A 1200 V, 3-Pin TO-247AD, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 180 W
패키지 = TO-247AD
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 15.87 x 5.31 x 20.7mm
최소 작동 온도 = -55 °C Co-Pack IGBT over 21A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations