■ 제품필수정보

제조사	Toshiba
제조사품명	GT40QR21,F(O
간략설명	Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±25V Maximum Power Dissipation = 230 W
패키지 = TO-3P
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 2.5MHz Transistor Configuration = Single
크기 = 15.5 x 4.5 x 20mm Gate Capacitance = 1500pF IGBT Discretes, Toshiba