■ 제품필수정보

제조사	Onsemi
제조사품명	FGA30S120P
간략설명	onsemi FGA30S120P IGBT, 60 A 1300 V, 3-Pin TO-3PN, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 1300 V Maximum Gate Emitter Voltage = ±25V Maximum Power Dissipation = 348 W
패키지 = TO-3PN
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Transistor Configuration = Single
크기 = 15.8 x 5 x 20.1mm
최소 작동 온도 = -55 °C Discrete IGBTs, 1000V and over, Fairchild Semiconductor