■ 제품필수정보

제조사	Infineon
제조사품명	IRGSL4B60KD1PBF
간략설명	Infineon IRGSL4B60KD1PBF IGBT, 11 A 600 V, 3-Pin I2PAK (TO-262), Through Hole

■ 제품사양

Maximum Continuous Collector Current = 11 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 63 W
패키지 = I2PAK (TO-262)
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 8 ??30kHz Transistor Configuration = Single
크기 = 10.7 x 4.8 x 11.3mm
최소 작동 온도 = -55 °C Co-Pack IGBT up to 20A, Infineon. Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations