■ 제품필수정보

제조사	Toshiba
제조사품명	TK12P60W,RVQ(S
간략설명	N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK Toshiba TK12P60W,RVQ(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 11.5 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 340 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.7V Maximum Power Dissipation = 100 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = TK MOSFET N-Channel, TK1x
시리즈, Toshiba