■ 제품필수정보
제조사 |
Vishay |
제조사품명 |
SIA449DJ-T1-GE3 |
간략설명 |
P-Channel MOSFET, 10.4 A, 30 V, 6-Pin SOT-363 Vishay SIA449DJ-T1-GE3 |
■ 제품사양
Channel
타입 = P Maximum Continuous Drain Current = 10.4 A Maximum Drain Source Voltage = 30 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 38 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 19 W Transistor Configuration = Single Maximum Gate Source Voltage = -12 V, +12 V
칩당 요소 수 = 1
높이 = 0.8mm P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor