■ 제품필수정보

제조사	Onsemi
제조사품명	FDS3890
간략설명	Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4.7 A Maximum Drain Source Voltage = 80 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 82 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 1.6 W, 2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +175 °C
높이 = 1.575mm PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.