■ 제품필수정보

제조사	Toshiba
제조사품명	TK100E10N1
간략설명	N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 Toshiba TK100E10N1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 207 A Maximum Drain Source Voltage = 100 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 3.4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Maximum Power Dissipation = 255 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
시리즈 = TK MOSFET N-Channel, TK100
시리즈, Toshiba