■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SI4532CDY-T1-GE3 |
| 간략설명 |
Dual N/P-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3 |
■ 제품사양
Channel
타입 = N, P Maximum Continuous Drain Current = 4.3 A, 6 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 65 mΩ, 140 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.78 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 2
최소 작동 온도 = -55 °C Dual N/P-Channel MOSFET, Vishay Semiconductor
