■ 제품필수정보

제조사	Onsemi
제조사품명	FDD4N60NZ
간략설명	N-Channel MOSFET, 3.4 A, 600 V, 3-Pin DPAK onsemi FDD4N60NZ

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.4 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.5 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 114 W Transistor Configuration = Single Maximum Gate Source Voltage = -25 V, +25 V Width = 6.22mm
최소 작동 온도 = -55 °C UniFET??N-Channel MOSFET, Fairchild Semiconductor. UniFET??MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II??MOSFET to withstand over 2000V HBM surge stress. UniFET??MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.