■ 제품필수정보

제조사	Infineon
제조사품명	BSS127H6327XTSA2
간략설명	N-Channel MOSFET, 21 mA, 600 V, 3-Pin SOT-23 Infineon BSS127H6327XTSA2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 21 mA Maximum Drain Source Voltage = 600 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 600 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.6V Minimum Gate Threshold Voltage = 1.4V Maximum Power Dissipation = 500 mW Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 0.65 nC @ 10 V
높이 = 1mm Infineon SIPMOS® N-Channel MOSFETs