■ 제품필수정보

제조사	Vishay
제조사품명	SI7850DP-T1-E3
간략설명	N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO-8 Vishay SI7850DP-T1-E3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 6.2 A Maximum Drain Source Voltage = 60 V
패키지 = PowerPAK SO
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 22 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.8 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 18 nC @ 10 V
최소 작동 온도 = -55 °C N-Channel MOSFET, 60V to 90V, Vishay Semiconductor