■ 제품필수정보

제조사	Vishay
제조사품명	SI2308BDS-T1-GE3
간략설명	N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1.9 A Maximum Drain Source Voltage = 60 V
패키지 = SOT-23 (TO-236)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 156 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.09 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 4.5 nC @ 10 V
최소 작동 온도 = -55 °C N-Channel MOSFET, 60V to 90V, Vishay Semiconductor