■ 제품필수정보

제조사	Onsemi
제조사품명	FQP2N60C
간략설명	N-Channel MOSFET, 2 A, 600 V, 3-Pin TO-220AB onsemi FQP2N60C

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220AB
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 4.7 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 54 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Typical Gate Charge @ Vgs = 8.5 nC @ 10 V
시리즈 = QFET QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor ??s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.