■ 제품필수정보
제조사 |
Onsemi |
제조사품명 |
FDS6930B |
간략설명 |
Dual N-Channel MOSFET, 5.5 A, 30 V, 8-Pin SOIC onsemi FDS6930B |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 5.5 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 38 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 2.7 nC @ 5 V
시리즈 = PowerTrench PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor. ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.