Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole
■ 제품사양
Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V 패키지 = TO-3PNIS 장착형태 = Through Hole Channel 타입 = N 핀수 = 3 Transistor Configuration = Single 크기 = 15.8 x 5 x 21mm 최대 작동 온도 = +150 °C IGBT Discretes, Toshiba
