■ 제품필수정보
| 제조사 |
Toshiba |
| 제조사품명 |
2SK3878(F) |
| 간략설명 |
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F) |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 900 V
패키지 = TO-3PN
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 1.3 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Maximum Power Dissipation = 150 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Typical Gate Charge @ Vgs = 60 nC @ 10 V
높이 = 19mm MOSFET N-Channel, 2SK
시리즈, Toshiba
