■ 제품필수정보

제조사	Onsemi
제조사품명	HUF75639P3
간략설명	N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-220AB onsemi HUF75639P3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 100 V
패키지 = TO-220AB
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 25 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 200 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 110 nC @ 20 V
시리즈 = UltraFET UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.