■ 제품필수정보

제조사	Infineon
제조사품명	IRF5801TRPBF
간략설명	N-Channel MOSFET, 600 mA, 200 V, 6-Pin TSOP-6 Infineon IRF5801TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 600 mA Maximum Drain Source Voltage = 200 V
패키지 = TSOP
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 2.2 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 2 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Transistor Material = Si
시리즈 = HEXFET N-Channel Power MOSFET 150V to 600V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.