■ 제품필수정보

제조사	Vishay
제조사품명	SIR5802DP-T1-RE3
간략설명	N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR5802DP-T1-RE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 137.5 A Maximum Drain Source Voltage = 80 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.004 Ω Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = N-Channel 80 V The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.TrenchFET Gen IV power MOSFET Very low RDS x Qg figure-of-merit (FOM) Tuned for the lowest RDS x Qoss FOM 100 % Rg and UIS tested