■ 제품필수정보

제조사	Infineon
제조사품명	IHW30N65R6XKSA1
간략설명	Infineon IHW30N65R6XKSA1 IGBT, 65 A 650 V, 3-Pin PG-TO247-3

■ 제품사양

Maximum Continuous Collector Current = 65 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 160 W
패키지 = PG-TO247-3
핀수 = 3 The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.High ruggedness and stable temperature behaviour Low EMI Pb-free lead plating, RoHS compliant Powerful monolithic reverse-conducting diode with low forward voltage