■ 제품필수정보

제조사	Infineon
제조사품명	IPDD60R190G7XTMA1
간략설명	N-Channel MOSFET, 13 A, 600 V, 10-Pin DDPAK Infineon IPDD60R190G7XTMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 13 A Maximum Drain Source Voltage = 600 V
패키지 = DDPAK
장착형태 = Surface Mount
핀수 = 10 Maximum Drain Source Resistance = 190 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = IPD50R The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS??G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.Enabling highest energy efficiency Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits Reduced parasitic source inductance improves efficiency and ease-of-use Enables higher power density solutions Exceeding the highest quality standards