■ 제품필수정보

제조사	Infineon
제조사품명	IPB60R040CFD7ATMA1
간략설명	N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FP Infineon IPB60R040CFD7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 18 A Maximum Drain Source Voltage = 650 V
패키지 = TO-220 FP
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 180 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = IPA60R The Infineon 600V CoolMOS??CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitorsBest-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performance trade-off Enabling increased power density solutions