■ 제품필수정보
| 제조사 |
Infineon |
| 제조사품명 |
FF6MR12KM1BOSA1 |
| 간략설명 |
N-Channel MOSFET, 250 A, 1200 V AG-62MM Infineon FF6MR12KM1BOSA1 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 250 A Maximum Drain Source Voltage = 1200 V
패키지 = AG-62MM
장착형태 = Screw Mount Maximum Drain Source Resistance = 5.81 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.45V
칩당 요소 수 = 1
시리즈 = FF6MR The Infineon 62 mm 1200 V, 6 mΩ half bridge module with Cool Sic??MOSFET.High current density Low switching losses Superior gate oxide reliability Highest robustness against humidity Robust integrated body diode, and thus optimal thermal conditions
