■ 제품필수정보

제조사	Infineon
제조사품명	IPN70R1K2P7SATMA1
간략설명	Silicon N-Channel MOSFET, 9.4 A, 700 V, 3-Pin SOT-223 Infineon IPN70R1K2P7SATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9.4 A Maximum Drain Source Voltage = 700 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.2 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = CoolMOS The Infineon design of Cool MOS??is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest Cool MOS??P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV, etc.Product validation acc. JEDEC Standard Low switching losses (Eoss) Integrated ESD protection diode Excellent thermal behaviour