■ 제품필수정보

제조사	Infineon
제조사품명	IGT60R190D1SATMA1
간략설명	Silicon N-Channel MOSFET, 12.5 A, 600 V, 8-Pin HSOF-8 Infineon IGT60R190D1SATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 12.5 A Maximum Drain Source Voltage = 600 V
패키지 = HSOF-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.19 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1.6V
칩당 요소 수 = 1
시리즈 = CoolGaN The Infineon design of Cool MOS??is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. Cool MOS??P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Pb-free plating Halogen free mold compound