■ 제품필수정보

제조사	Infineon
제조사품명	IPW65R110CFDAFKSA1
간략설명	Dual N-Channel MOSFET Transistor & Diode, 99.6 A, 650 V, 3-Pin TO-247 Infineon IPW65R110CFDAFKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 99.6 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.11 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 2
시리즈 = CoolMOS The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineons second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation ??self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability