■ 제품필수정보

제조사	Infineon
제조사품명	IPS80R750P7AKMA1
간략설명	N-Channel MOSFET Transistor & Diode, 7 A, 800 V, 3-Pin IPAK Infineon IPS80R750P7AKMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 7 A Maximum Drain Source Voltage = 800 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 0.75 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon 800V Cool MOS P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.Best-in-class FOM R DS(on) * E oss reduced Qg, C is and C oss Best-in-class DPAK R DS(on) of 280m??Best-in-class V (GS)the of 3V and smallest V (GS)the variation of ± 0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Fully optimized portfolio 0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to Cool MOS??C3 Enabling higher power density designs, BOM savings and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs