■ 제품필수정보

제조사	Infineon
제조사품명	IPL60R360P6SATMA1
간략설명	N-Channel MOSFET Transistor & Diode, 30 A, 650 V, 5-Pin ThinPAK 5 x 6 Infineon IPL60R360P6SATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 650 V
패키지 = ThinPAK 5 x 6
장착형태 = Surface Mount
핀수 = 5 Maximum Drain Source Resistance = 0.36 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = CoolMOS P6 The Infineon new Cool MOS Thin PAK 5x6 is a leadless SMD package especially designed for high voltage MOSFETs. This new package has a very small footprint of 5x6mm 2 and a very low profile with only 1mm height. This significantly smaller package size in combination with its benchmark low parasitic inductances can be used as a new and effective way to decrease system solution size in power- density driven designs. The Thin PAK 5x6 package is characterized by a very low source inductance 1.6nH, as well as a similar thermal performance as DPAK. The package hence enables faster and thus more efficient switching of power MOSFETs and is easier to handle in terms of switching behaviour and EMI.Extremely low losses due to very low FOMRdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Pb-freeplating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC