■ 제품필수정보

제조사	Infineon
제조사품명	BSC014N04LSTATMA1
간략설명	Dual N-Channel MOSFET Transistor & Diode, 205 A, 40 V, 8-Pin TDSON Infineon BSC014N04LSTATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 205 A Maximum Drain Source Voltage = 40 V
패키지 = TDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0014 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V
칩당 요소 수 = 2
시리즈 = OptiMOS 5 The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.Low RDS(on) Optimized for synchronous rectification Enhanced 175°C capability in SuperSO8 Longer life time Highest efficiency and power density Highest system reliability Thermal robustness