■ 제품필수정보

제조사	Infineon
제조사품명	IPD50R1K4CEAUMA1
간략설명	N-Channel MOSFET, 4.8 A, 500 V, 3-Pin DPAK Infineon IPD50R1K4CEAUMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4.8 A Maximum Drain Source Voltage = 500 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.4 Ω Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = 500V CoolMOS??CE The Infineon 500V CoolMOS??CE series N-channel power MOSFET. The CoolMOS??is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. This series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.Very high commutation ruggedness Easy to use/drive Pb-free plating, Halogen free mold compound