■ 제품필수정보

제조사	Infineon
제조사품명	IRFS4229TRLPBF
간략설명	N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK Infineon IRFS4229TRLPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 250 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 48 mO
칩당 요소 수 = 1
시리즈 = 1 The Infineon HEXFET® Power MOSFET is specifically designed for Sustain Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 175°C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability