■ 제품필수정보
제조사 |
Infineon |
제조사품명 |
IRFR2905ZTRPBF |
간략설명 |
N-Channel MOSFET, 59 A, 55 V, 3-Pin DPAK Infineon IRFR2905ZTRPBF |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 59 A Maximum Drain Source Voltage = 55 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 14.5 mO Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1 The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead Free