■ 제품필수정보

제조사	Infineon
제조사품명	IRF7341GTRPBF
간략설명	Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 Infineon IRF7341GTRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5.1 A Maximum Drain Source Voltage = 55 V
패키지 = SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 65 mO Maximum Gate Threshold Voltage = 1V
칩당 요소 수 = 2 The Infineon HEXFET ® Power MOSFET??s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET??s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead-Free