■ 제품필수정보

제조사	Infineon
제조사품명	IPD60R1K5CEAUMA1
간략설명	N-Channel MOSFET, 5 A, 600 V, 3-Pin DPAK Infineon IPD60R1K5CEAUMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.5 Ohm Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1 The Infineon CoolMOS??CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS??CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.Narrow margins between typical and max R DS(on) Reduced energy stored in output capacitance (E oss) Good body diode ruggedness and reduced reverse recovery charge (Q rr) Optimized integrated R g