■ 제품필수정보

제조사	Infineon
제조사품명	IHW20N135R5XKSA1
간략설명	Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3

■ 제품사양

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 1350 V Maximum Gate Emitter Voltage = ±20 V, ±25 V Maximum Power Dissipation = 310 W
패키지 = PG-TO247-3
핀수 = 3 The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference