■ 제품필수정보

제조사	Infineon
제조사품명	IRF9956TRPBF
간략설명	Dual N-Channel MOSFET, 3.5 A, 30 V, 8-Pin SO-8

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 3.5 A Maximum Drain Source Voltage = 30 V
패키지 = SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.2 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V
칩당 요소 수 = 2
시리즈 = HEXFET The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.Generation V technology Ultra low on resistance Surface mount Very low gate charge and switching losses Fully avalanche rated Dual N-channel MOSFET