■ 제품필수정보
제조사 |
Infineon |
제조사품명 |
IRF6785MTRPBF |
간략설명 |
N-Channel MOSFET, 19 A, 200 V, 7-Pin DirectFET ISOMETRIC |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 19 A Maximum Drain Source Voltage = 200 V
패키지 = DirectFET ISOMETRIC
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 0.1 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging.Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier applications Dual sided cooling compatible Lead-Free (Qualified up to 260°C Reflow)